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| BAR67... Silicon PIN Diode For low loss RF switches and attenuators Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.25 pF) Low harmonics 1 Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) , BAR67-02V 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Low forward resistance (typ. 1.5 @ 5mA) BAR67-02V 2 Type BAR67-02V Package SC79 Configuration single LS(nH) Marking 0.6 T Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation TS 118C Tj Top Tstg Symbol RthJS 150 -55 ... 125 -55 ... 150 C Symbol VR IF Ptot Value 150 200 250 Unit V mA mW Value 115 Unit K/W Feb-04-2003 BAR67... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Breakdown voltage I(BR) = 5 A Reverse current VR = 100 V Forward voltage IF = 50 mA AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, I-region width rf rr Unit max. 20 1.2 V nA V typ. 0.95 V(BR) IR VF 150 - CT RP 25 4 2.5 1.5 1 700 1.8 0.35 0.35 0.25 0.23 0.55 0.9 - pF k RL = 100 2 Charge carrier life time - WI - 13 - Feb-04-2003 ns m BAR67... Diode capacitance CT = f = Parameter 0.5 F 10 4 KOhm 10 3 0.4 0.35 1 MHz 100 MHz 1 GHz 1.8 GHz CT Rp 10 2 100 MHz 0.3 10 1 1 GHz 1.8 GHz 0.25 0.2 10 0 0.15 10 -1 0 0.1 0 5 10 15 20 25 30 V 40 5 10 15 20 25 30 VR f = 100MHz 10 Ohm 3 TA = Parameter 10 0 A 10 -1 10 2 10 -2 10 1 IF rf 10 -3 10 -4 10 0 10 -5 10 -1 10 -2 10 -1 10 0 10 1 mA 10 2 10 -6 0 0.2 0.4 IF 3 Forward resistance rf = (I F) Forward current IF = (VF) -40 C 25 C 85 C 125 C 0.6 0.8 V Feb-04-2003 (VR ) Reverse parallel resistance RP = (VR ) f = Parameter V 40 VR 1.2 VF BAR67... Forward current IF = BAR67-02V 250 mA BAR67-02V 10 3 K/W 200 10 2 150 125 100 75 50 25 0 0 90 105 120 C RthJS 175 IF 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 15 30 45 60 75 150 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 TS Permissible Pulse Load BAR67-02V 10 2 IFmax/IFDC 10 1 10 0 -6 10 10 IFmax / IFDC = (tp ) D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 -5 10 -4 10 -3 10 -2 s 10 0 tP 4 Feb-04-2003 (TS ) Permissible Puls Load RthJS = (tp ) s 10 0 tP |
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